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Brand Name : Toshiba
Model Number : SSM3K361R,LF
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs
Features
AEC-Q101 qualified (Please see the orderable part number list)
175℃ MOSFET
4.5 V drive
Low drain-source on-resistance :
RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
Applications
• Power Management Switches
• DC-DC Converters
Description
SSM3K361R,LF is a N-channel enhancement mode field effect transistor (MOSFET) designed in a compact SOT-23 surface mount package. It is engineered to provide high efficiency and power density in a minimal board space, making it an ideal solution for a wide range of power management and switching applications in portable and space-constrained electronic devices.
INFORMATION
|   			 Category   			 |   			  			 |   		|
|   			 Mfr   			 |   			  			 |   		|
|   			 Series   			 |   			  			 |   		|
|   			 Packaging   			 |   			  			 Tape & Reel (TR)     			Cut Tape (CT)     			Digi-Reel®   			 |   			  			 |   		
|   			 Part Status   			 |   			  			 Active   			 |   			  			 |   		
|   			 FET Type   			 |   			  			 |   		|
|   			 Technology   			 |   			  			 |   		|
|   			 Drain to Source Voltage (Vdss)   			 |   			  			 100 V   			 |   			  			 |   		
|   			 Current - Continuous Drain (Id) @ 25°C   			 |   			  			 |   		|
|   			 Drive Voltage (Max Rds On, Min Rds On)   			 |   			  			 4.5V, 10V   			 |   			  			 |   		
|   			 Rds On (Max) @ Id, Vgs   			 |   			  			 69mOhm @ 2A, 10V   			 |   			  			 |   		
|   			 Vgs(th) (Max) @ Id   			 |   			  			 2.5V @ 100µA   			 |   			  			 |   		
|   			 Gate Charge (Qg) (Max) @ Vgs   			 |   			  			 3.2 nC @ 4.5 V   			 |   			  			 |   		
|   			 Vgs (Max)   			 |   			  			 ±20V   			 |   			  			 |   		
|   			 Input Capacitance (Ciss) (Max) @ Vds   			 |   			  			 430 pF @ 15 V   			 |   			  			 |   		
|   			 FET Feature   			 |   			  			 -   			 |   			  			 |   		
|   			 Power Dissipation (Max)   			 |   			  			 1.2W (Ta)   			 |   			  			 |   		
|   			 Operating Temperature   			 |   			  			 175°C   			 |   			  			 |   		
|   			 Grade   			 |   			  			 -   			 |   			  			 |   		
|   			 Qualification   			 |   			  			 -   			 |   			  			 |   		
|   			 Mounting Type   			 |   			  			 Surface Mount   			 |   			  			 |   		
|   			 Supplier Device Package   			 |   			  			 SOT-23F   			 |   			  			 |   		
|   			 Package / Case   			 |   			  			 |   		|
|   			 Base Product Number   			 |   			
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                        SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Images |